dpls160 low v ce(sat) pnp surface mount transistor features ? epitaxial planar die construction ? complementary npn type available (dnls160) ? surface mount package suited for automated assembly ? lead free/rohs compliant (note 1) ? "green device" (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.008 grams (approximate) new product sot-23 e b c schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current - continuous i c -1 a peak pulse collector current i cm -2 a base current (dc) i b -300 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25 c p d 300 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http:// www.di odes.com/products/lead_f ree/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as s hown on page 4 or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf. ds31389 rev. 4 - 2 1 of 4 www.diodes.com dpls160 ? diodes incorporated
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -80 ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ? ? -100 -50 na a v cb = -60v, i e = 0 v cb = -60v, i e = 0, t a = 150c collector cutoff current i ces ? ? -100 na v ce = -60v, v be = 0 emitter cutoff current i ebo ? ? -100 na v eb = -5v, i c = 0 on characteristics (note 4) dc current gain h fe 200 150 100 325 250 180 ? ? ? v v ce = -5v, i c = -1ma v ce = -5v, i c = -500ma v ce = -5v, i c = -1a collector-emitter saturation voltage v ce(sat) ? ? ? -90 -90 -160 -160 -175 -330 mv i c = -100ma, i b = -1ma i c = -500ma, i b = -50ma i c = -1a, i b = -100ma collector-emitter saturation resistance r ce(sat) ? 160 330 m ? i c = -1a, i b = -100ma base-emitter saturation voltage v be(sat) ? -0.95 -1.1 v i c = -1a, i b = -50ma base-emitter turn on voltage v be(on) ? -0.82 -0.9 v v ce = -5v, i c = -1a small signal characteristics output capacitance c obo ? 10 15 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t 150 220 ? mhz v ce = -10v, i c = -50ma, f = 100mhz new product notes: 4. measured under puls ed conditions. pulse width = 300 s. duty cycle 2%. 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 maximum power dissipation vs. ambient temperature a 150 200 250 300 350 400 0 0 0.3 0.6 0.9 1.2 1.5 01234 -v , collector-emitter voltage (v) ce -i , 5 c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b ds31389 rev. 4 - 2 2 of 4 www.diodes.com dpls160 ? diodes incorporated
0 200 400 600 0.001 0.01 0.1 1 10 -i , collector current (a) c h, d c c u r r e n t g ai n fe fig. 3 typical dc current gain vs. collector current 0 0.1 0.2 0.3 0.4 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , collector emitter saturation voltage (v) ce(sat) 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base emitter turn-on voltage (v) be(on) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current t = 85c a t = 150c a t = 25c a t = -55c a i/i = 20 cb 0 20 40 60 80 100 120 0.01 0.1 1 10 100 v , reverse voltage (v) r capacitance (pf) fig. 7 typical total capacitance f = 1mhz c ibo c obo 0 50 100 150 200 250 010 2030405060708090100 i , collector current (ma) c f , current gain-bandwidth product (mhz) t fig. 8 typical gain-bandwidth product vs. collector current v = -10v f = 100mhz ce new product ds31389 rev. 4 - 2 3 of 4 www.diodes.com dpls160 ? diodes incorporated
ds31389 rev. 4 - 2 4 of 4 www.diodes.com dpls160 ? diodes incorporated ordering information (note 5) device packaging shipping DPLS160-7 sot-23 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information new product pk1 = product type marking code ym = date code marking y = year ex: u = 2007 m = month ex: 9 = september pk1 ym date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. a m j l d f b c h k g sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 f 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm x e y c z dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35
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